Share Email Print

Proceedings Paper

Development of a membrane-etch wet station for x-ray masks
Author(s): Susan Sonchik Marine; Douglas E. Benoit; Kevin W. Collins; Kurt R. Kimmel; Harold G. Linde; Jeffrey P. Lissor; Danny M. Plouff; James A. Warner; Charles A. Whiting; Jeff D. Towne
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

This paper describes the evolution of a simple recirculating etch station into a successful x-ray mask membrane-etch station. The manufacturing etch station consists of a large, heated mix tank in which she ethanolamine solution is brought to reaction temperature. The etchant is then pumped into a smaller heated process tank and is continuously recirculated through a filter between the two tanks. Up to 50 substrates can be processed during one product run. Both tanks and wetted parts are made of Teflon. Salient features of the membrane-etch station include dual Pyrex reflux columns, a nitrogen blanket throughout the systems to prevent oxygen infiltration, special high-temperature Teflon and Gore-tex seals for the mix and process tank lids, and a Teflon filter in the recirculating line between the mix and process tanks. Subsequent tooling improvements included improving the thermal sensors and installing more powerful heaters. Tool qualification tests have demonstrated the membrane-etch station ready for manufacturing use. The manufacturing etch station has increased our etch capacity by almost an order of magnitude and is currently being used to produce silicon membranes for x-ray mask substrates.

Paper Details

Date Published: 13 May 1994
PDF: 9 pages
Proc. SPIE 2194, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing IV, (13 May 1994); doi: 10.1117/12.175800
Show Author Affiliations
Susan Sonchik Marine, IBM Microelectronics Div. (United States)
Douglas E. Benoit, IBM Microelectronics Div. (United States)
Kevin W. Collins, IBM Microelectronics Div. (United States)
Kurt R. Kimmel, IBM Microelectronics Div. (United States)
Harold G. Linde, IBM Microelectronics Div. (United States)
Jeffrey P. Lissor, IBM Microelectronics Div. (United States)
Danny M. Plouff, IBM Microelectronics Div. (United States)
James A. Warner, IBM Microelectronics Div. (United States)
Charles A. Whiting, IBM Microelectronics Div. (United States)
Jeff D. Towne, A. Cooper & Son (United States)

Published in SPIE Proceedings Vol. 2194:
Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing IV
David O. Patterson, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?