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Proceedings Paper

Selective area growth of III-V semiconductors by chemical beam epitaxy: study of reaction mechanisms
Author(s): Graham J. Davies; P. J. Skevington; J. S. Foord; C. L. French; C. L. Levoguer
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Paper Abstract

The localized growth of III-V epitaxial structures on substrates patterned with dielectric masks provides a flexible technique for the monolithic integration of electronic and optoelectronic devices. Chemical beam epitaxy (CBE) is an attractive growth technique for use in this approach and interest has consequently focussed on the reaction mechanisms which give rise to selective area growth in CBE. In the present paper we therefore seek to describe the molecular surface chemistry involved. In contrast it is shown that the sticking probability of Gp III precursors on the dielectric masks employed in selected area epitaxy is vanishingly low, and any free Gp III species produced become trapped in an inert oxidized form within the surface layers. As a result the production of metallic Gp III species on the surface does not occur, hence growth of the III-V semiconductor is not observed. Adsorption of the Gp V species on the dielectric mask is shown to promote decomposition of the Gp III precursors, resulting in a loss of selective growth at high V-III incident flux ratios or low growth temperatures.

Paper Details

Date Published: 11 May 1994
PDF: 10 pages
Proc. SPIE 2140, Epitaxial Growth Processes, (11 May 1994); doi: 10.1117/12.175795
Show Author Affiliations
Graham J. Davies, British Telecom Research Labs. (United Kingdom)
P. J. Skevington, British Telecom Research Labs. (United Kingdom)
J. S. Foord, Univ. of Oxford (United Kingdom)
C. L. French, Univ. of Oxford (United Kingdom)
C. L. Levoguer, Univ. of Oxford (United Kingdom)


Published in SPIE Proceedings Vol. 2140:
Epitaxial Growth Processes
Chris J. Palmstrom; Maria C. Tamargo, Editor(s)

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