Share Email Print

Proceedings Paper

Analysis of growth parameters and strain in GaInSb/InAs superlattices
Author(s): James M. Van Hove; Andrew M. Wowchak; G. L. Carpenter; Peter P. Chow; L. A. Chow
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

InAs/InGaSb strained-layer superlattices have been deposited for long wavelength infrared (IR) detectors. The superlattice structure consists of alternating periods of InAs and InGaSb deposited upon GaSb or GaAs substrates. The lattice mismatch between the two layers is accommodated by strain which modifies the electronic and optical properties of the material. These properties can be controlled by varying the layer thickness, composition, and heterointerface properties. Molecular beam epitaxy was used to deposit the InAs/InGaSb superlattice and reflection high energy electron diffraction (RHEED) patterns were observed during growth. It was found that RHEED oscillations and x-ray diffraction patterns were heavily influenced by the incident As2 flux used during the InAs layers. Precise control of the As flux with a valve cracker resulted in RHEED intensity oscillations continuing throughout the superlattice and excellent x-ray diffraction patterns. Fast Fourier transform IR spectroscopy of the superlattices indicate absorption around 13 micrometers .

Paper Details

Date Published: 11 May 1994
PDF: 12 pages
Proc. SPIE 2140, Epitaxial Growth Processes, (11 May 1994); doi: 10.1117/12.175789
Show Author Affiliations
James M. Van Hove, SVT Associates (United States)
Andrew M. Wowchak, SVT Associates (United States)
G. L. Carpenter, SVT Associates (United States)
Peter P. Chow, SVT Associates (United States)
L. A. Chow, Stanford Univ. (United States)

Published in SPIE Proceedings Vol. 2140:
Epitaxial Growth Processes
Chris J. Palmstrom; Maria C. Tamargo, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?