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Proceedings Paper

Metallorganic vapor phase epitaxy growth of ZnSe1-xTex on (111) and (001) GaAs substrates
Author(s): Harald Stanzl; A. Rosenauer; Klaus H. Wolf; Marcus Kastner; Berthold Hahn; W. Gebhardt
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Paper Abstract

ZnSe1-xTex layers were grown by MOVPE on (111) and (001) GaAs substrates at 340 degree(s)C. The growth process of the ternary compound is described by a thermodynamical analysis. The structural quality of the films was determined by x-ray diffraction and transmission electron microscopy. In the present work it is shown that in the case of (001) GaAs substrates the density of misfit dislocation lines extending into the epilayer is reduced drastically by improved oxide removal. For ZnTe/GaAs (111) misfit dislocations can spatially be confined to a narrow (approximately 10 nm) region close to the interface.

Paper Details

Date Published: 11 May 1994
PDF: 10 pages
Proc. SPIE 2140, Epitaxial Growth Processes, (11 May 1994); doi: 10.1117/12.175786
Show Author Affiliations
Harald Stanzl, Univ. Regensburg (Germany)
A. Rosenauer, Univ. Regensburg (Germany)
Klaus H. Wolf, Univ. Regensburg (Germany)
Marcus Kastner, Univ. Regensburg (Germany)
Berthold Hahn, Univ. Regensburg (Germany)
W. Gebhardt, Univ. Regensburg (Germany)

Published in SPIE Proceedings Vol. 2140:
Epitaxial Growth Processes
Chris J. Palmstrom; Maria C. Tamargo, Editor(s)

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