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Proceedings Paper

Molecular-Beam Epitaxy (MBE) growth of chemically ordered Co-Pt and Fe-Pt alloy phases
Author(s): Robin F. C. Farrow; Gerald R. Harp; D. K. Weller; R. F. Marks; Michael F. Toney; Alfonso Cebollada; Thomas A. Rabedeau
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Paper Abstract

MBE is a powerful synthesis technique for preparation of ordered intermetallic phases since the high rates of surface diffusion allow in-plane chemical ordering to occur at temperatures far below those which are necessary for ordering in bulk samples. This lifting of kinetic constraints enables the phase diagrams to be explored at low temperatures where bulk ordering processes are often too sluggish for phase equilibria to be reached. Specifically, we describe the preparation of epitaxial films (in the thickness range 100 - 1000 angstrom) of ordered intermetallic phases in the Co-Pt and Fe-Pt intermetallic systems. Such phases are of potential importance for magnetic and magneto-optical storage applications. In particular we discuss growth and chemical ordering in epitaxial Co1-xPtx films near x equals 0.25, 0.5, and 0.75 as well as Fe1-xPtx films near x equals 0.5. Depending on growth conditions these phases order spontaneously during growth with resulting changes in the Kerr spectra. Ordering results in large Kerr rotations (approximately 1 degree(s)) in the UV spectral region for the films with x near 0.5.

Paper Details

Date Published: 11 May 1994
PDF: 6 pages
Proc. SPIE 2140, Epitaxial Growth Processes, (11 May 1994); doi: 10.1117/12.175781
Show Author Affiliations
Robin F. C. Farrow, IBM Almaden Research Ctr. (United States)
Gerald R. Harp, IBM Almaden Research Ctr. (United States)
D. K. Weller, IBM Almaden Research Ctr. (United States)
R. F. Marks, IBM Almaden Research Ctr. (United States)
Michael F. Toney, IBM Almaden Research Ctr. (United States)
Alfonso Cebollada, IBM Almaden Research Ctr. (United States)
Thomas A. Rabedeau, Stanford Synchrotron Research Lab. (United States)


Published in SPIE Proceedings Vol. 2140:
Epitaxial Growth Processes
Chris J. Palmstrom; Maria C. Tamargo, Editor(s)

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