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Proceedings Paper

Growth and characterization of spontaneously-ordered AlInAs and GaInAs on InP
Author(s): Douglas J. Arent; M. Bode; P. Ahrenkiel; R. Ahrenkiel; Kristine A. Bertness; Sarah R. Kurtz; C. Kramer; J. M. Olson
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Paper Abstract

Spontaneous CuPt-type ordering of Group III atoms on the (111) subplanes of the GaInAs2 and AlInAs2 epitaxially deposited by atmospheric pressure organometallic vapor phase epitaxy is observed by transmission electron microscopy. We find positive correlation between the observation of CuPt-like (111) superlattice diffraction spots in transmission electron diffraction (TED) patterns and reduced band gap energies, with a reduction of more than 75 meV for GaInAs2 and 25 meV for AlInAs2. For these materials, ordering depends strongly on growth temperature, but only moderately on substrate misorientation. Room temperature time-resolved photoconductivity of ordered GaInAs2 exhibit 50 microsecond(s) ec decay and behavior indicative of carrier localization.

Paper Details

Date Published: 11 May 1994
PDF: 7 pages
Proc. SPIE 2140, Epitaxial Growth Processes, (11 May 1994); doi: 10.1117/12.175777
Show Author Affiliations
Douglas J. Arent, National Renewable Energy Lab. (United States)
M. Bode, National Renewable Energy Lab. (United States)
P. Ahrenkiel, National Renewable Energy Lab. (United States)
R. Ahrenkiel, National Renewable Energy Lab (United States)
Kristine A. Bertness, National Renewable Energy Lab. (United States)
Sarah R. Kurtz, National Renewable Energy Lab. (United States)
C. Kramer, National Renewable Energy Lab. (United States)
J. M. Olson, National Renewable Energy Lab. (United States)


Published in SPIE Proceedings Vol. 2140:
Epitaxial Growth Processes
Chris J. Palmstrom; Maria C. Tamargo, Editor(s)

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