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Proceedings Paper

Room-temperature photoreflectance characterization of process-induced strains in GaAs/Ga0.7Al0.3As quantum dots
Author(s): Hao Qiang; Fred H. Pollak; Yin-Sheng Tang; Peidong D. Wang; Cliva M. Sotomayor-Torres
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Paper Abstract

Using contactless photoreflectance at 300 K we have studied several GaAs/Ga0.7Al0.3As quantum dot arrays fabricated by reactive-ion etching using SiCl4. The spectrum from a control sample that had no dots also was recorded. From the observed shifts of the fundamental conduction to heavy- and light-hole quantum transitions we have evaluated the magnitude and nature of the process-induced strain in the dots.

Paper Details

Date Published: 11 May 1994
PDF: 7 pages
Proc. SPIE 2139, Quantum Well and Superlattice Physics V, (11 May 1994); doi: 10.1117/12.175719
Show Author Affiliations
Hao Qiang, CUNY/Brooklyn College (United States)
Fred H. Pollak, CUNY/Brooklyn College (United States)
Yin-Sheng Tang, Univ. of Glasgow (Germany)
Peidong D. Wang, Univ. of Glasgow (Germany)
Cliva M. Sotomayor-Torres, Univ. of Glasgow (Germany)

Published in SPIE Proceedings Vol. 2139:
Quantum Well and Superlattice Physics V
Gottfried H. Doehler; Emil S. Koteles, Editor(s)

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