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Proceedings Paper

Metal layer resist process optimization by design of experiment
Author(s): Gwo-Yuh Shiau; Daniel Hao-Tien Lee; Hwang-Kuen Lin
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Paper Abstract

The lithography processes for the metal layers of stacked DRAM have normally been considered as one of the most important steps to determine the chip yield performance. The severe topography step-height on the metal resist processes normally leads to an insufficient UDOF for production. The Taguchi design of experiment (DOE) method is chosen in this study to optimize the resist processes on metal layers with a 1.0 micrometers topography step. The resist process parameters are arranged into the orthogonal arrays and to experimentally determine the optimized conditions for resist patterned over the severe topography step-height with 1.2 micrometers pitches. The important factors controlling the process window are reported in the paper. An increase of 4 dB in S/N response, which corresponds to an increase of 0.4 micrometers in DOF and 6% in exposure window, is achieved by using the design of the experiment. Furthermore, the control factors to determine the optimized process conditions for thick resist processes on metal topography wafers can be quite different from those for thin resist processes on bare silicone wafers.

Paper Details

Date Published: 17 May 1994
PDF: 9 pages
Proc. SPIE 2197, Optical/Laser Microlithography VII, (17 May 1994);
Show Author Affiliations
Gwo-Yuh Shiau, Industrial Technology Research Institute (Taiwan)
Daniel Hao-Tien Lee, Industrial Technology Research Institute (Taiwan)
Hwang-Kuen Lin, Industrial Technology Research Institute (Taiwan)

Published in SPIE Proceedings Vol. 2197:
Optical/Laser Microlithography VII
Timothy A. Brunner, Editor(s)

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