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Proceedings Paper

Substrate contamination effects in the processing of chemically amplified DUV photoresists
Author(s): John L. Sturtevant; Steven J. Holmes; Stephen E. Knight; Denis Poley; Paul A. Rabidoux; Linda K. Somerville; Thomas L. McDevitt; Anthony Stamper; Ed Valentine; Will Conley; Ahmad D. Katnani; James T. Fahey
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Paper Abstract

The role of the wafer substrate in processing of chemically amplified DUV photoresists has been examined. Various substrates including silicon, oxide, titanium nitride, silicon nitride and metals were investigated with both positive and negative tone DUV resist systems. A `substrate contamination' effect was observed in some cases, which results in distorted photoresist profiles at the substrate/resist interface. This effect is interpreted in terms of neutralization of the photogenerated acid in the resist, and is dependent upon substrate deposition and clean conditions as well as exposure and post-expose bake processing. In addition, organic antireflective films are seen to act as effective barrier layers in some cases.

Paper Details

Date Published: 17 May 1994
PDF: 11 pages
Proc. SPIE 2197, Optical/Laser Microlithography VII, (17 May 1994); doi: 10.1117/12.175469
Show Author Affiliations
John L. Sturtevant, IBM Essex Junction (United States)
Steven J. Holmes, IBM Essex Junction (United States)
Stephen E. Knight, IBM Essex Junction (United States)
Denis Poley, IBM Essex Junction (United States)
Paul A. Rabidoux, IBM Essex Junction (United States)
Linda K. Somerville, IBM Essex Junction (United States)
Thomas L. McDevitt, IBM Essex Junction (United States)
Anthony Stamper, IBM Essex Junction (United States)
Ed Valentine, IBM Essex Junction (United States)
Will Conley, IBM East Fishkill (United States)
Ahmad D. Katnani, IBM East Fishkill (United States)
James T. Fahey, IBM East Fishkill (United States)

Published in SPIE Proceedings Vol. 2197:
Optical/Laser Microlithography VII
Timothy A. Brunner, Editor(s)

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