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Proceedings Paper

Process optimization for 0.35-um i-line lithography
Author(s): Cesar M. Garza Sr.; William L. Krisa; Anthony Yen; Jing S. Shu
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Paper Abstract

Extending i-line lithography to 0.35 micrometers processing is a realistic possibility because of improvements in photoresists, steppers, track equipment, and reticle technology. The manufacturing of 0.35 micrometers devices can include as many as twenty lithography levels, however, most of the critical issues can be addressed in printing the gate and contact levels. The optimized process for 0.35$ mum gates and contacts is presented in this paper. Even with advanced photoresists, enhancement techniques were needed to meet the processing requirements for these two levels on actual topography. The enhancement techniques used for the gate level were a TARC and modified illumination. A TARC was required to improve linewidth uniformity, and modified illumination to improve focus budget and exposure latitude. For contacts, attenuated phase shift was required to achieve workable focus latitude. The data presented shows that an optimized i-line resist processes with enhancement techniques can meet the requirements of volume production of 0.35 micrometers devices.

Paper Details

Date Published: 17 May 1994
PDF: 12 pages
Proc. SPIE 2197, Optical/Laser Microlithography VII, (17 May 1994);
Show Author Affiliations
Cesar M. Garza Sr., Texas Instruments Inc. (United States)
William L. Krisa, Texas Instruments Inc. (United States)
Anthony Yen, Texas Instruments Inc. (United States)
Jing S. Shu, Texas Instruments Inc. (United States)

Published in SPIE Proceedings Vol. 2197:
Optical/Laser Microlithography VII
Timothy A. Brunner, Editor(s)

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