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Proceedings Paper

Comprehensive evaluation of major phase-shift mask technologies for isolated gate structures in logic designs
Author(s): Lars W. Liebmann; Thomas H. Newman; Richard A. Ferguson; Ronald M. Martino; Antoinette F. Molless; Mark O. Neisser; J. Tracy Weed
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Paper Abstract

This paper presents a comparative analysis of binary `chrome-on-glass,' attenuated, biased rim, and phase edge shifted DUV lithography solutions for advanced circuitry in the sub-250 nm image size regime. Lithography techniques are compared based on design complexity, ground rule impact, process latitude, and cost. Data are presented from aerial image simulations (SPLAT), aerial image measurements (AIMSR), and SEM measurements. Phase edge shifted designs clearly exhibit the largest process window for 200 nm linewidths exposed on a 0.5 NA 248 nm DUV stepper. The complexity of the mask engineering (design as well as manufacture) and exposure process for this `hard' phase shifting technique warrants the study of less powerful but also less restrictive phase shifting options. This paper investigates the tradeoffs associated with various applicable phase shift mask (PSM) techniques and presents recommendations based on specific program requirements.

Paper Details

Date Published: 17 May 1994
PDF: 12 pages
Proc. SPIE 2197, Optical/Laser Microlithography VII, (17 May 1994); doi: 10.1117/12.175455
Show Author Affiliations
Lars W. Liebmann, IBM East Fishkill (United States)
Thomas H. Newman, Ultratech Stepper, Inc. (United States)
Richard A. Ferguson, IBM East Fishkill (United States)
Ronald M. Martino, IBM East Fishkill (United States)
Antoinette F. Molless, IBM East Fishkill (United States)
Mark O. Neisser, IBM East Fishkill (United States)
J. Tracy Weed, IBM East Fishkill (United States)

Published in SPIE Proceedings Vol. 2197:
Optical/Laser Microlithography VII
Timothy A. Brunner, Editor(s)

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