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Proceedings Paper

Analyzing deep-UV lens aberrations using aerial image and latent image metrologies
Author(s): Eric L. Raab; Christophe Pierrat; Charles H. Fields; Robert L. Kostelak; William G. Oldham; Sheila Vaidya
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Paper Abstract

The technique of direct aerial image metrology (AIM) has been applied to characterize the performance of a microlithographic lens. AIM is potentially faster and more reproducible than measurements obtained by scanning electron microscopy. Direct measurement of the aerial image eliminates both the process variations associated with resist processing as well as the subjective nature of evaluating resist profiles. We have used AIM to evaluate some of the primary aberrations of a 248 nm stepper lens. We compare the results to those obtained with latent image scatterometry, a proven technique for measuring lens performance. We found that AIM, while providing qualitatively good results, contained some slight systematic errors that reduced the accuracy of the data. The sources of error and their remedies are discussed.

Paper Details

Date Published: 17 May 1994
PDF: 16 pages
Proc. SPIE 2197, Optical/Laser Microlithography VII, (17 May 1994); doi: 10.1117/12.175450
Show Author Affiliations
Eric L. Raab, AT&T Bell Labs. (United States)
Christophe Pierrat, AT&T Bell Labs. (United States)
Charles H. Fields, Univ. of California/Berkeley (United States)
Robert L. Kostelak, AT&T Bell Labs. (United States)
William G. Oldham, Univ. of California/Berkeley (United States)
Sheila Vaidya, AT&T Bell Labs. (United States)

Published in SPIE Proceedings Vol. 2197:
Optical/Laser Microlithography VII
Timothy A. Brunner, Editor(s)

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