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Proceedings Paper

Correcting for proximity effect widens process latitude
Author(s): Richard C. Henderson; Oberdan W. Otto
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Paper Abstract

The optical proximity effect can be a substantial fraction of the CD error budget. It is insufficient to determine the proximity effect as the difference between line-width in an equal line/gap pattern with that of an isolated line. Other geometries may have greater proximity induced line-width errors. We present here a comprehensive, four parameter, analytic process to characterize actual proximity. It is shown that when individual, geometry-dependent line bias is applied line-width uniformity can be reduced to the +/- 10 nm range. Using the +/- 10% CD criteria, individual line bias expands the range of exposure dose and depth of focus.

Paper Details

Date Published: 17 May 1994
PDF: 10 pages
Proc. SPIE 2197, Optical/Laser Microlithography VII, (17 May 1994); doi: 10.1117/12.175430
Show Author Affiliations
Richard C. Henderson, Trans Vector Technologies Inc. (United States)
Oberdan W. Otto, Trans Vector Technologies Inc. (United States)

Published in SPIE Proceedings Vol. 2197:
Optical/Laser Microlithography VII
Timothy A. Brunner, Editor(s)

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