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Proceedings Paper

Research on ultrahigh resolution of inorganic photoresist film
Author(s): Changtai Yu; Fengzhen Guo; Hua Yu; Zhougfu Qi; Xiangdong Yu; Yongkuan Liu; Peng Li; Zhongyi Zhang
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Paper Abstract

The microfraction of VLSI requires to realize the precision of submicron or even more delicate. Therefore ,the photoresist used in etching technology is required to be made thenner and more even. Yet ,in the etching technology of VLSI device nowadays , it is very difficult to realize it , by the traditional organic photoresist. As to the coarse substrate made by photoetching more than once , the resist film must be thick enough to cover the previous device pattern on substrate by using organic resist and traditional coating way. For example , the nearly 1pm high steps of oxide or metaffic layer are often met in the research of VLSI devices. In order to over them ,the thickness of organic photoresist should be more than 1im at least ,which is much thicker than the desired film thickness for higher distinction. And owing to the uneven thickness of steps , the distortion of etched graphs are easy to arise , which limit the improvement of photoetching precision.

Paper Details

Date Published: 16 May 1994
PDF: 3 pages
Proc. SPIE 2195, Advances in Resist Technology and Processing XI, (16 May 1994); doi: 10.1117/12.175400
Show Author Affiliations
Changtai Yu, Zhejiang Univ. (China)
Fengzhen Guo, Zhejiang Univ. (China)
Hua Yu, Zhejiang Univ. (China)
Zhougfu Qi, Zhejiang Univ. (China)
Xiangdong Yu, Ministry of Machine and Electronics Industry (China)
Yongkuan Liu, Ministry of Machine and Electronics Industry (China)
Peng Li, Ministry of Machine and Electronics Industry (China)
Zhongyi Zhang, Ministry of Machine and Electronics Industry (China)

Published in SPIE Proceedings Vol. 2195:
Advances in Resist Technology and Processing XI
Omkaram Nalamasu, Editor(s)

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