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Proceedings Paper

Characterization of the development of DNO/novolac resists by surface energy measurements
Author(s): Emilienne Fadda; Gilles R. Amblard; Andre P. Weill; Alain Prola
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Paper Abstract

The resist processes used for optical lithography are mainly positive tone, based on the use of DNQ/novolac photoresists. It has been demonstrated that enhancing the resist pattern profiles is possible by optimization of the development step. Development techniques, such as two-step or interrupted development, have been introduced to enhance the contrast of DNQ/novolac resists. This paper demonstrates that the resist surface modifications occurring during development can be followed by surface energy measurements. The surface energy changes of four commercial resists (JSR IX 500, Shipley SPRT 510, OCG HPR 504 and Hoechst AZ 5206) during development are investigated. The results are then correlated to the changes in pattern profiles obtained when using the interrupted development technique.

Paper Details

Date Published: 16 May 1994
PDF: 8 pages
Proc. SPIE 2195, Advances in Resist Technology and Processing XI, (16 May 1994); doi: 10.1117/12.175371
Show Author Affiliations
Emilienne Fadda, France Telecom/CNET (France)
Gilles R. Amblard, France Telecom/CNET (France)
Andre P. Weill, Centre commun CNET/SGS Thomson (France)
Alain Prola, France Telecom/CNET (France)


Published in SPIE Proceedings Vol. 2195:
Advances in Resist Technology and Processing XI
Omkaram Nalamasu, Editor(s)

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