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Proceedings Paper

Design of a bottom antireflective layer for optical lithography
Author(s): James T. Fahey; Wayne M. Moreau; Kevin M. Welsh; Steve S. Miura; Nicholas K. Eib; Gary T. Spinillo; John L. Sturtevant
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Paper Abstract

The advent of deep-UV(DUV), chemically amplified, acid catalyzed photoresists as successors to positive diazoquinones photoresists has brought about a new set of process environment concerns directed towards all materials in contact or absorbed by the photoresists. In addition to the application of DUV bottom anti-reflective coatings (BARCs) to suppress optical reflection and subsequent linewidth distortion, we must consider the properties and interaction of the BARC layer with the labile photoacid of the latent image. In this regard, we have examined the physico-chemical aspects of the DUV BARC with regards to acting as a barrier layer to substrate poisoning, and as an optical absorbing layer that does not interact and/or distort the deep-UV profile. Various single component polymeric BARCs were synthesized and examined. Considerations will be discussed of the optical absorbance, the coating quality, dry etch rate, and the impermeability of the BARC layer to photoacid diffusion to fulfill the performance requirements of BARCs for DUV lithography.

Paper Details

Date Published: 16 May 1994
PDF: 25 pages
Proc. SPIE 2195, Advances in Resist Technology and Processing XI, (16 May 1994); doi: 10.1117/12.175357
Show Author Affiliations
James T. Fahey, IBM East Fishkill (United States)
Wayne M. Moreau, IBM East Fishkill (United States)
Kevin M. Welsh, IBM East Fishkill (United States)
Steve S. Miura, IBM East Fishkill (United States)
Nicholas K. Eib, IBM East Fishkill (United States)
Gary T. Spinillo, IBM East Fishkill (United States)
John L. Sturtevant, IBM Corp. (United States)

Published in SPIE Proceedings Vol. 2195:
Advances in Resist Technology and Processing XI
Omkaram Nalamasu, Editor(s)

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