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Proceedings Paper

Strained-layer InAsP/InGaP MQWs grown by MOVPE
Author(s): Paul K. L. Yu; M. Markarian; Robert B. Welstand; X. S. Jiang; Arthur R. Clawson; S. S. Lau
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Paper Abstract

Strained balanced InAsP/InGaP superlattices for optoelectronic applications were studied with materials grown by low pressure MOVPE. For 20 and 30 period InAsP/InGaP superlattices with a 23 percent As mole fraction in the InAsP layers, sharp x-ray satellite peaks are obtained. The superlattices show an average lattice constant close to that of the InP substrate. Strong photoluminescence with narrow emission linewidth are observed at room temperature around 1.11 micrometers . PIN diodes with an intrinsic region consisting of the InAsP/InGaP superlattice show efficient electroabsorption at wavelengths around 1.15 micrometers with a small residual absorption of 59 cm-1.

Paper Details

Date Published: 2 May 1994
PDF: 10 pages
Proc. SPIE 2149, Technologies for Optical Fiber Communications, (2 May 1994); doi: 10.1117/12.175287
Show Author Affiliations
Paul K. L. Yu, Univ. of California/San Diego (United States)
M. Markarian, Univ. of California/San Diego (United States)
Robert B. Welstand, Univ. of California/San Diego (United States)
X. S. Jiang, Univ. of California/San Diego (United States)
Arthur R. Clawson, Univ. of California/San Diego (United States)
S. S. Lau, Univ. of California/San Diego (United States)

Published in SPIE Proceedings Vol. 2149:
Technologies for Optical Fiber Communications
Gail J. Brown; Susan R. Sloan; Kenneth D. Pedrotti; Didier J. Decoster; Didier J. Decoster; Joanne S. LaCourse; Yoon-Soo Park; Kenneth D. Pedrotti; Susan R. Sloan, Editor(s)

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