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Proceedings Paper

Monolithic p-i-n-FET photoreceivers
Author(s): Doyle T. Nichols; Niloy K. Dutta; Paul Raymond Berger; P. R. Smith; Deborah L. Sivco; Alfred Y. Cho
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Paper Abstract

We have investigated monolithic pin-FET photoreceivers in both the InP and GaAs systems. The GaAs-based circuits consisted of a single growth step in which the p-i-n diode was grown on top of the MESFET. The circuits exhibited flatband gains as high as 17 dB and bandwidths of 2.0 GHz. The InP circuits featured regrown MODFETs integrated with p-i-n diodes. These devices exhibited a gain of 17 dB and a bandwidth of 10 GHz.

Paper Details

Date Published: 2 May 1994
PDF: 6 pages
Proc. SPIE 2149, Technologies for Optical Fiber Communications, (2 May 1994); doi: 10.1117/12.175283
Show Author Affiliations
Doyle T. Nichols, AT&T Bell Labs. (United States)
Niloy K. Dutta, AT&T Bell Labs. (United States)
Paul Raymond Berger, AT&T Bell Labs. (United States)
P. R. Smith, AT&T Bell Labs. (United States)
Deborah L. Sivco, AT&T Bell Labs. (United States)
Alfred Y. Cho, AT&T Bell Labs. (United States)

Published in SPIE Proceedings Vol. 2149:
Technologies for Optical Fiber Communications
Gail J. Brown; Susan R. Sloan; Kenneth D. Pedrotti; Didier J. Decoster; Didier J. Decoster; Joanne S. LaCourse; Yoon-Soo Park; Kenneth D. Pedrotti; Susan R. Sloan, Editor(s)

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