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Proceedings Paper

High-speed flip-chip p-i-n photodetector with integrated microlens
Author(s): Tun S. Tan; Christophe P. Kocot; Joseph Straznicky; Ronald T. Kaneshiro; Forrest Kellert
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Paper Abstract

The design of high-speed, high responsivity PIN optical detectors for fiber optic telecommunication test equipment requires a very careful trade-off between lateral and vertical active area dimensions. A thin absorption layer (i-layer) leads to high bandwidth at the expense of responsivity. A large-area device improves light coupling efficiency from a fiber, but reduces the bandwidth. In addition, packaging constraints must be considered. Our approach attempts to optimize the end-system performance by incorporating an integral micro-lens which increases the effective light collection area; a double-pass illumination strategy that increases the bandwidth without sacrificing responsivity; and a micro-flip-chip die attachment technology that minimizes parasitic capacitance and inductance. An optical receiver composed of a GaAs MODFET-based transimpedance amplifier and a flip-chip PIN photodector exhibited a bandwidth of 7.2 GHz with an optical-to-electrical conversion gain of 560 V/W.

Paper Details

Date Published: 2 May 1994
PDF: 8 pages
Proc. SPIE 2149, Technologies for Optical Fiber Communications, (2 May 1994); doi: 10.1117/12.175273
Show Author Affiliations
Tun S. Tan, Hewlett-Packard Co. (United States)
Christophe P. Kocot, Hewlett-Packard Co. (United States)
Joseph Straznicky, Hewlett-Packard Co. (United States)
Ronald T. Kaneshiro, Hewlett-Packard Co. (United States)
Forrest Kellert, Hewlett-Packard Co. (United States)

Published in SPIE Proceedings Vol. 2149:
Technologies for Optical Fiber Communications
Gail J. Brown; Susan R. Sloan; Kenneth D. Pedrotti; Didier J. Decoster; Didier J. Decoster; Joanne S. LaCourse; Yoon-Soo Park; Kenneth D. Pedrotti; Susan R. Sloan, Editor(s)

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