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Proceedings Paper

Thermal and reverse base current effects on heterojunction bipolar transistors and circuits
Author(s): J. S. Yuan
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Paper Abstract

Device modeling of the heterojunction bipolar transistor (HBT) has been examined. The Gummel-Poon model derived from silicon bipolar transistor is able to predict the base and collector currents of the HBT with good accuracy for negligible self- heating. The present model extends the Gummel-Poon model equations to account for self-heating using a nonlinear thermal resistance. The present model also accounts for base current reversal due to impact ionization in the collector-base depletion region. Effects of self-heating on the performance of analog circuits such as current mirrors and small-signal amplifiers are evaluated.

Paper Details

Date Published: 2 May 1994
PDF: 11 pages
Proc. SPIE 2149, Technologies for Optical Fiber Communications, (2 May 1994); doi: 10.1117/12.175253
Show Author Affiliations
J. S. Yuan, Univ. of Central Florida (United States)


Published in SPIE Proceedings Vol. 2149:
Technologies for Optical Fiber Communications
Gail J. Brown; Susan R. Sloan; Kenneth D. Pedrotti; Didier J. Decoster; Didier J. Decoster; Joanne S. LaCourse; Yoon-Soo Park; Kenneth D. Pedrotti; Susan R. Sloan, Editor(s)

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