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Proceedings Paper

Investigation of porous silicon by Raman scattering and second-harmonic generation techniques
Author(s): Leonid A. Golovan; Andrei V. Zoteyev; Pavel K. Kashkarov; Viktor Yu. Timoshenko
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Paper Abstract

A combination of Raman spectroscopy and second-harmonic generation techniques was used in the investigation of porous silicon structure. The Raman spectra evidence that our samples consist of microcrystals with the size about (3 - 4) nm. The nonlinear optical data show that there is not appreciable crystal cell distortion in the silicon nanoclusters of porous layer.

Paper Details

Date Published: 2 May 1994
PDF: 4 pages
Proc. SPIE 2150, Design, Simulation, and Fabrication of Optoelectronic Devices and Circuits, (2 May 1994); doi: 10.1117/12.175015
Show Author Affiliations
Leonid A. Golovan, Moscow State Univ. (Russia)
Andrei V. Zoteyev, Moscow State Univ. (Russia)
Pavel K. Kashkarov, Moscow State Univ. (Russia)
Viktor Yu. Timoshenko, Moscow State Univ. (Russia)

Published in SPIE Proceedings Vol. 2150:
Design, Simulation, and Fabrication of Optoelectronic Devices and Circuits
Mario Nicola Armenise, Editor(s)

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