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Proceedings Paper

Design of Al-free and Al-based InGaAs/GaAs strained quantum well 980-nm pump lasers including thermal behavior effects on E/O characteristics
Author(s): Sergio Pellegrino; M. G. Re; C. Beoni; D. Reichenbach; F. Vidimari
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Paper Abstract

A 2D thermal simulator and a model to evaluate high power lasers characteristics have been developed. With these models it was possible to optimize cavity length of InGaAs/GaAs (Multiple) Quantum Well 980 nm lasers realized both with Al-based and Al-free confining layers. A comprehensive experimental investigation of the influence of cavity length and temperature on the laser emission wavelength has been performed. This allows a fine trimming of the devices to match the Erbium doped fiber absorption bandwidth.

Paper Details

Date Published: 2 May 1994
PDF: 9 pages
Proc. SPIE 2150, Design, Simulation, and Fabrication of Optoelectronic Devices and Circuits, (2 May 1994); doi: 10.1117/12.175004
Show Author Affiliations
Sergio Pellegrino, Alcatel-Telettra Research Ctr. (United Kingdom)
M. G. Re, Alcatel-Telettra Research Ctr. (Italy)
C. Beoni, Alcatel-Telettra Research Ctr. (Italy)
D. Reichenbach, Alcatel-Telettra Research Ctr. (Italy)
F. Vidimari, Alcatel-Telettra Research Ctr. (Italy)

Published in SPIE Proceedings Vol. 2150:
Design, Simulation, and Fabrication of Optoelectronic Devices and Circuits
Mario Nicola Armenise, Editor(s)

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