Share Email Print
cover

Proceedings Paper

Electroluminescence from novel porous silicon p-n junction devices
Author(s): Jieming Qi; D. C. Diaz; H. Guan; Biswajit Das; A. Yin; M. Dobrowolska
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

The electroluminescent properties of various porous silicon pn junction devices have been investigated. Devices were fabricated by constant current anodization method as well as a novel method developed for anodizing heavily doped pn junctions. The constant current anodized devices show electroluminescence only under reverse bias condition. The light emission mechanism in these devices is believed to be similar to the hot electron relaxation mechanism observed in a surface-treated crystalline silicon pn junction diode at breakdown. The pn junctions fabricated by the novel anodization technique show electroluminescence under forward bias condition. The light emission mechanism in these devices is believed to be due to electron-hole injection in the silicon quantum wires.

Paper Details

Date Published: 2 May 1994
PDF: 10 pages
Proc. SPIE 2150, Design, Simulation, and Fabrication of Optoelectronic Devices and Circuits, (2 May 1994); doi: 10.1117/12.174980
Show Author Affiliations
Jieming Qi, Univ. of Notre Dame (United States)
D. C. Diaz, Univ. of Notre Dame (United States)
H. Guan, Univ. of Notre Dame (United States)
Biswajit Das, Univ. of Notre Dame (United States)
A. Yin, Univ. of Notre Dame (United States)
M. Dobrowolska, Univ. of Notre Dame (United States)


Published in SPIE Proceedings Vol. 2150:
Design, Simulation, and Fabrication of Optoelectronic Devices and Circuits
Mario Nicola Armenise, Editor(s)

© SPIE. Terms of Use
Back to Top