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Proceedings Paper

Developed photoresist metrology using scatterometry
Author(s): Michael R. Murnane; Christopher J. Raymond; Ziad R. Hatab; S. Sohail H. Naqvi; John Robert McNeil
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Paper Abstract

Scatterometry is shown to be a viable alternative to current methods of post-developed line shape metrology. Five wafers with focus-exposure matrices of line-space grating patterns in chemically amplified resist were generated. The gratings were illuminated with a He-Ne laser and, utilizing only the specular reflected order measured as a function of incident angle, we were able to predict linewidth and top and bottom rounded features. The scatterometry results were verified with those obtained from scanning electron microscopy (SEM). A set of wafers having a SRAM device pattern was analyzed. These wafers contain columns of devices, each having received an incremental exposure dose. We present exposure predictions based on data taken with the dome scatterometer, a novel device which measures all diffraction orders simultaneously by projecting them onto a diffuse hemispherical `dome.' A statistical calibration routine was used to train on the diffraction patterns from die locations with known exposure values.

Paper Details

Date Published: 1 May 1994
PDF: 13 pages
Proc. SPIE 2196, Integrated Circuit Metrology, Inspection, and Process Control VIII, (1 May 1994); doi: 10.1117/12.174160
Show Author Affiliations
Michael R. Murnane, Univ. of New Mexico (United States)
Christopher J. Raymond, Univ. of New Mexico (United States)
Ziad R. Hatab, Univ. of New Mexico (United States)
S. Sohail H. Naqvi, Univ. of New Mexico (United States)
John Robert McNeil, Univ. of New Mexico (United States)

Published in SPIE Proceedings Vol. 2196:
Integrated Circuit Metrology, Inspection, and Process Control VIII
Marylyn Hoy Bennett, Editor(s)

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