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Proceedings Paper

Extraction of process specific photolithography model parameters
Author(s): Patrick G. Drennan; Bruce W. Smith
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Paper Abstract

In order to truly represent photolithography through simulation, the exposure, bake, and development models and model parameters must be accurate. Using the approach for the measurement of the in-situ development rate, developed in the first paper of this two paper series, the model parameters were extracted for Shipley 812 resist with Shipley MF312 developer. Development rates for exposures of 66, 90, and 114 mJ/cm2 were measured. It was discovered that the set of Kim model parameters, R1 through R6, were highly correlated with the combination of the Dill exposure parameters. Thus, for A equals 0.581 micrometers -1, B equals 0.082 micrometers -1 equals 0.013 cm2/mJ, the parameters R1 equals 25.559 micrometers /min, R2 equals 10.451 micrometers /min, R3 equals 1.879, R4 equals 0.112, R5 equals 1.586, R6 equals 0.000 micrometers , and (sigma) equals 0.0016 micrometers were extracted. A comparison of simulated data using the extracted model parameters with the measured data demonstrated the quality of the fit.

Paper Details

Date Published: 1 May 1994
PDF: 13 pages
Proc. SPIE 2196, Integrated Circuit Metrology, Inspection, and Process Control VIII, (1 May 1994); doi: 10.1117/12.174146
Show Author Affiliations
Patrick G. Drennan, Motorola (United States)
Bruce W. Smith, Rochester Institute of Technology (United States)

Published in SPIE Proceedings Vol. 2196:
Integrated Circuit Metrology, Inspection, and Process Control VIII
Marylyn Hoy Bennett, Editor(s)

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