Share Email Print

Proceedings Paper

Technique for the measurement of the in-situ development rate
Author(s): Patrick G. Drennan; Bruce W. Smith; David W. Alexander
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Using a site services development spray monitor (DSM 100) and a post processing algorithm, the in-situ measured development rates of photoresist were obtained. The interference signals for eight different wavelengths were simultaneously monitored on a patterned wafer as it spun on the development module of a wafer track. Since the interference signal is generated from a circularly polarized light source, the DSM 100 has demonstrated robustness to the red cloud effect, developer spray, bubbles in the developer, and ambient light. After collecting the eight interference curves, these post processing algorithms used the Marquardt Levenberg non- linear regression algorithm and a linear regression approach to find the development rate as a function of development time. The first approach generated the better curve. A plot of development rate versus depth was generated via numerical integration of the plot of development rate versus time. This technique is equally well suited for other types of exposure and resist chemistries.

Paper Details

Date Published: 1 May 1994
PDF: 17 pages
Proc. SPIE 2196, Integrated Circuit Metrology, Inspection, and Process Control VIII, (1 May 1994); doi: 10.1117/12.174145
Show Author Affiliations
Patrick G. Drennan, Motorola (United States)
Bruce W. Smith, Rochester Institute of Technology (United States)
David W. Alexander, Site Services Inc. (United States)

Published in SPIE Proceedings Vol. 2196:
Integrated Circuit Metrology, Inspection, and Process Control VIII
Marylyn Hoy Bennett, Editor(s)

© SPIE. Terms of Use
Back to Top