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Proceedings Paper

Two-dimensional in-situ e-beam intensity profile monitoring method for SEM/EBL test system
Author(s): Sucheta Gorwadkar; Shashi A. Gangal
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Paper Abstract

A phase-lock-in technique is used for direct monitoring of electron beam intensity profile in 2- D in the scanning electron microscope based electron beam lithography system. Faraday cup assembly, modulated ramp generator, and data-acquisition software necessary for beam parameter measurements were developed. The electron beam diameter of 100 angstrom dimension at 50 pA current with the accuracy +/- 24 angstrom was measured. The effect of variation of operating conditions of SEM on the diameter and shape was observed and studied. The set-up developed enables the user to take in-situ measurement and control e-beam parameters.

Paper Details

Date Published: 1 May 1994
PDF: 7 pages
Proc. SPIE 2196, Integrated Circuit Metrology, Inspection, and Process Control VIII, (1 May 1994); doi: 10.1117/12.174132
Show Author Affiliations
Sucheta Gorwadkar, Nagoya Univ. and Univ. of Poona (Japan)
Shashi A. Gangal, Univ. of Poona (India)

Published in SPIE Proceedings Vol. 2196:
Integrated Circuit Metrology, Inspection, and Process Control VIII
Marylyn Hoy Bennett, Editor(s)

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