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Proceedings Paper

Critical dimension measurement in the SEM: comparison of backscattered vs. secondary electron detection
Author(s): Neal T. Sullivan; Robert M. Newcomb
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Paper Abstract

Critical dimension measurements for state of the art sub-micron semiconductor processes are typically accomplished using automated scanning electron microscopes. The measurements generated in these instruments are primarily based upon secondary electron imaging techniques. Several issues associated with this mode of SEM imaging that directly impact the precision and accuracy of the measurement system are reviewed. These issues have led to the current investigation of SEM metrology utilizing backscattered electron imaging techniques. The implications and differences between SE and BSE imaging techniques and their relation to CD measurements are discussed in this work.

Paper Details

Date Published: 1 May 1994
PDF: 10 pages
Proc. SPIE 2196, Integrated Circuit Metrology, Inspection, and Process Control VIII, (1 May 1994); doi: 10.1117/12.174120
Show Author Affiliations
Neal T. Sullivan, Digital Equipment Corp. (United States)
Robert M. Newcomb, Digital Equipment Corp. (United States)

Published in SPIE Proceedings Vol. 2196:
Integrated Circuit Metrology, Inspection, and Process Control VIII
Marylyn Hoy Bennett, Editor(s)

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