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Proceedings Paper

Simple model of electron-bombarded CCD gain
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Paper Abstract

In earlier work, a model of the back illuminated CCD was presented and used to predict optical quantum efficiency. In this work we expand on the model and find an analytical solution for the probability of collection of a carrier generated at a given depth. We apply our solution to find the theoretical quantum efficiencies for both electron bombardment and optical illumination and compare them to measurements taken on thinned, backside-enhanced, non- AR coated devices. A single set of parameters is found which shows a reasonable fit to both sets of data. Earlier models of electron-bombarded CCDs have failed to explain the measured nonzero gain at low energies, however our model shows nonzero gain at all energies.

Paper Details

Date Published: 1 May 1994
PDF: 12 pages
Proc. SPIE 2172, Charge-Coupled Devices and Solid State Optical Sensors IV, (1 May 1994); doi: 10.1117/12.172773
Show Author Affiliations
Alice L. Reinheimer, Scientific Imaging Technologies, Inc. (United States)
Morley M. Blouke, Scientific Imaging Technologies, Inc. (United States)

Published in SPIE Proceedings Vol. 2172:
Charge-Coupled Devices and Solid State Optical Sensors IV
Morley M. Blouke, Editor(s)

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