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Proceedings Paper

Characterization and modeling of CCD devices on high-resistivity silicon substrates
Author(s): Stacy R. Kamasz; Michael G. Farrier; Charles R. Smith
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Paper Abstract

CCD devices fabricated on low-resistivity silicon epi (30 - 60 (Omega) -cm) exhibit satisfactory imaging characteristics in the visible spectrum but inferior imaging characteristics in the near infrared and x ray regions. This is a result of the greater penetration depth of the photons, which tend to travel beyond the depletion regions under the CCD gates causing optical crosstalk and poor responsivity. This represents a performance limiting issue for acousto-optical applications and scientific imaging. CCD devices fabricated on high-resistivity silicon epi (>= 1000 (Omega) -cm) with increased epi layer thickness will exhibit superior imaging performance for near-infrared and x-ray photons. This is because the width of the depletion regions is much greater compared to devices on conventional substrates. DALSA has fabricated CCD structures on high-resistivity substrates and has examined their performance, in particular imaging behavior in the near-infrared region of the spectrum. We also examine the behavior of the nonimaging circuitry associated with the CCD such as the output amplifiers.

Paper Details

Date Published: 1 May 1994
PDF: 12 pages
Proc. SPIE 2172, Charge-Coupled Devices and Solid State Optical Sensors IV, (1 May 1994); doi: 10.1117/12.172768
Show Author Affiliations
Stacy R. Kamasz, DALSA, Inc. (Canada)
Michael G. Farrier, DALSA, Inc. (Canada)
Charles R. Smith, DALSA, Inc. (Canada)

Published in SPIE Proceedings Vol. 2172:
Charge-Coupled Devices and Solid State Optical Sensors IV
Morley M. Blouke, Editor(s)

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