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Proceedings Paper

Characterization of a 4Kx2K three side buttable CCD
Author(s): Richard J. Stover; William E. Brown; David Kirk Gilmore; Mingzhi Wei
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Paper Abstract

Results are presented on the fabrication and characterization of a 4 K X 2 K three-side buttable CCD produced by Orbit Semiconductor. This first run of wafers was produced to test the ability of Orbit to produce high-quality scientific CCDs with the characteristics required for detectors to be used in optical instruments of the Keck Observatory. Also on the wafer are two 2 K X 2 K devices. Similar devices have been fabricated for us previously by Loral/Fairchild. Extensive characterization of the Loral devices has taken place over the past few years, so interest is high about the possibility that Orbit might become a second source for similar detectors. This paper presents the first results on the 4 K X 2 K CCDs, including measurements of charge transfer efficiency, low-temperature dark current, on-chip amplifier readout noise, localized charge traps, full well, and responsive quantum efficiency.

Paper Details

Date Published: 1 May 1994
PDF: 6 pages
Proc. SPIE 2172, Charge-Coupled Devices and Solid State Optical Sensors IV, (1 May 1994); doi: 10.1117/12.172765
Show Author Affiliations
Richard J. Stover, Univ. of California/Santa Cruz (United States)
William E. Brown, Univ. of California/Santa Cruz (United States)
David Kirk Gilmore, Univ. of California/Santa Cruz (United States)
Mingzhi Wei, Univ. of California/Santa Cruz (United States)


Published in SPIE Proceedings Vol. 2172:
Charge-Coupled Devices and Solid State Optical Sensors IV
Morley M. Blouke, Editor(s)

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