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Proceedings Paper

Device-quality polycrystalline diamond by microwave plasma-enhanced CVD
Author(s): Peter B. Kosel; J. Iyer; S. F. Carr; Alan Garscadden; P. N. Barnes; R. L. C. Wu
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Paper Abstract

Crystalline diamond has some unique and extreme properties that make it an attractive semiconductor in certain electronic applications such as in high-power systems and high-temperature environments. However, since a source of low-cost single crystal diamond does not exist, its widespread use is not commercially attractive. A cheaper form of diamond is polycrystalline diamond, which has been recently routinely grown on silicon by the high- pressure microwave-source plasma deposition technique. Large- grain thick polycrystalline films have been obtained with properties approaching those of single-crystal diamond. This report describes results obtained from optical and electrical methods used in evaluating these films for use as ultraviolet radiation sensors and as a capacitor dielectric.

Paper Details

Date Published: 1 April 1994
PDF: 12 pages
Proc. SPIE 2151, Diamond-Film Semiconductors, (1 April 1994); doi: 10.1117/12.171757
Show Author Affiliations
Peter B. Kosel, Univ. of Cincinnati (United States)
J. Iyer, Univ. of Cincinnati (United States)
S. F. Carr, Air Force Wright Lab. (United States)
Alan Garscadden, Air Force Wright Lab. (United States)
P. N. Barnes, Air Force Wright Lab. (United States)
R. L. C. Wu, Universal Energy Systems (United States)

Published in SPIE Proceedings Vol. 2151:
Diamond-Film Semiconductors
Mike A. Tamor; Mohammad Aslam, Editor(s)

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