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Proceedings Paper

Problems of the n-type diamond doping
Author(s): Galina Popovici; Mark A. Prelas
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Paper Abstract

This paper is a review on would-be donor impurities in diamond lattice: N, P, Li, and Na. Other impurities like oxygen and sulfur are also discussed. As the solubility of donor impurities in the diamond lattice is predicted to be low, new methods of forcing the introduction of impurities into the diamond lattice are discussed. We propose a new method of electric-field-assisted diffusion and a method of increasing the sticking coefficient of the impurities by growth under electric bias. We also discuss the method of ion-assisted doping during growth proposed by a research group from SI Technologies.

Paper Details

Date Published: 1 April 1994
PDF: 9 pages
Proc. SPIE 2151, Diamond-Film Semiconductors, (1 April 1994); doi: 10.1117/12.171755
Show Author Affiliations
Galina Popovici, Univ. of Missouri/Columbia (United States)
Mark A. Prelas, Univ. of Missouri/Columbia (United States)

Published in SPIE Proceedings Vol. 2151:
Diamond-Film Semiconductors
Mike A. Tamor; Mohammad Aslam, Editor(s)

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