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Proceedings Paper

Epitaxial diamond Schottky diode on p+-substrate
Author(s): Wolfgang Ebert; A. Vescan; Thomas H. Borst; E. Olaf Weis; Erhard Kohn
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Paper Abstract

Schottky diodes have been fabricated on homeoepitaxial p-doped diamond layers grown on p+-diamond substrates. Two distinctly different configurations were investigated to study the influence of the p+-substrate conductivity and obtain a rectifying characteristic with low ohmic loss. A series resistance of 8(Omega) was obtained at 500 degree(s)C for strong forward bias and a 5 X 10-5 cm2 contact area. Due to the low activation energy of the p+-substrate conductivity the minimum series resistance at R.T was 70(Omega) . To our knowledge, these are the lowest series resistances reported so far for a diamond Schottky diode enabling extremely high current densities of 103 A/cm2 in combination with a current rectification ratio of 105 at +/- 2V.

Paper Details

Date Published: 1 April 1994
PDF: 8 pages
Proc. SPIE 2151, Diamond-Film Semiconductors, (1 April 1994); doi: 10.1117/12.171753
Show Author Affiliations
Wolfgang Ebert, Univ. Ulm (Germany)
A. Vescan, Univ. Ulm (Germany)
Thomas H. Borst, Univ. Ulm (Germany)
E. Olaf Weis, Univ. Ulm (Germany)
Erhard Kohn, Univ. Ulm (Germany)

Published in SPIE Proceedings Vol. 2151:
Diamond-Film Semiconductors
Mike A. Tamor; Mohammad Aslam, Editor(s)

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