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Proceedings Paper

High-power semiconductor lasers for lidar and sensing applications
Author(s): Mark C. Farries; Andrew C. Carter; T. J. Reid
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Paper Abstract

Recent advances in semiconductor laser technology, which have led to compact sources potentially suitable for lidar, are described. Quantum well technology has enabled InGaAs laser arrays to provide powers of 800 mW in the 900 - 1000 nm wavelength region while InGaAsP lasers provide peak powers of 1.4 W at the eye safe wavelength of 1.55 micrometers . A distributed feedback structure has been used to simultaneously produce a mean power of 100 mW and a linewidth of 800 kHz which may be used for coherent lidar (e.g., FM cw).

Paper Details

Date Published: 1 February 1993
PDF: 4 pages
Proc. SPIE 2088, Laser Dimensional Metrology: Recent Advances for Industrial Application, (1 February 1993); doi: 10.1117/12.168078
Show Author Affiliations
Mark C. Farries, GEC-Marconi Materials Technology (United Kingdom)
Andrew C. Carter, GEC-Marconi Materials Technology (United Kingdom)
T. J. Reid, GEC-Marconi Materials Technology (United Kingdom)

Published in SPIE Proceedings Vol. 2088:
Laser Dimensional Metrology: Recent Advances for Industrial Application
Michael J. Downs, Editor(s)

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