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Proceedings Paper

Influence of the stress state in silicon on the anisotropic etching process
Author(s): Ion G. Stiharu; Rama B. Bhat; Mojtaba Kahrizi; Leslie M. Landsberger
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Paper Abstract

This paper presents evidence of the influence of the state of stress on anisotropic etching of (100) oriented Si in KOH water solution. External load is applied to strips of Si which modifies the initial internal stress state actually generated by a patterned SiO2 masking film. Results obtained for circular patterns indicate that the etch patterns on the strips subjected to negative and positive stresses are different from each other and are different from strips which have not been subjected to external loads. These observations indicate that the etching process is influenced by the presence of stresses in the silicon. A technique to analyze the stress is proposed. The resulting variations of etched features with applied stress is significant.

Paper Details

Date Published: 1 February 1994
PDF: 9 pages
Proc. SPIE 2045, Laser-Assisted Fabrication of Thin Films and Microstructures, (1 February 1994); doi: 10.1117/12.167565
Show Author Affiliations
Ion G. Stiharu, Concordia Univ. (Canada)
Rama B. Bhat, Concordia Univ. (Canada)
Mojtaba Kahrizi, Concordia Univ. (Canada)
Leslie M. Landsberger, Concordia Univ. (Canada)

Published in SPIE Proceedings Vol. 2045:
Laser-Assisted Fabrication of Thin Films and Microstructures
Ian W. Boyd, Editor(s)

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