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Proceedings Paper

Low-thermal-budget MOS gate stack formation using a cluster tool rapid-thermal-processing module
Author(s): A. M. Bayoumi; J. Montgomery; R. T. Kuehn; F. S. Johnson; John R. Hauser
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Paper Abstract

Low thermal budget deposition of thin MOS gate stacks has been performed using a cluster tool rapid thermal processing module. This paper introduces the operational characteristics of the module, and the deposition conditions for gate oxide, nitride, and poly, in addition to spacer oxides. The different processing sequences for gate stacks are described, and finally the electrical characterization results of both rapid thermal chemical vapor deposition and conventional thermal MOS devices are compared.

Paper Details

Date Published: 15 February 1994
PDF: 5 pages
Proc. SPIE 2091, Microelectronic Processes, Sensors, and Controls, (15 February 1994); doi: 10.1117/12.167369
Show Author Affiliations
A. M. Bayoumi, North Carolina State Univ. (United States)
J. Montgomery, North Carolina State Univ. (United States)
R. T. Kuehn, North Carolina State Univ. (United States)
F. S. Johnson, North Carolina State Univ. (United States)
John R. Hauser, North Carolina State Univ. (United States)

Published in SPIE Proceedings Vol. 2091:
Microelectronic Processes, Sensors, and Controls
Kiefer Elliott; James A. Bondur; James A. Bondur; Kiefer Elliott; John R. Hauser; John R. Hauser; Dim-Lee Kwong; Asit K. Ray, Editor(s)

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