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Proceedings Paper

High-density plasma etching: a gate oxide damage study
Author(s): Calvin Gabriel
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Paper Abstract

To compare the damaging effect on gate oxide of polycide etching in several commercial implementations of conventional and high density plasma sources, a study was conducted using test devices consisting of a variety of large area-intensive and edge-intensive capacitors. The plasma sources compared during polycide etch included rf diode, rf triode, rf magnetically-enhanced reactive ion etch, microwave electron cyclotron resonance, and rf inductively-coupled plasma. Processes on the etchers used in this study were not necessarily optimized for damage, and improvements could probably be achieved with further work. Furthermore, the damage measurements made for one type of source are not expected to characterize other etchers having plasma sources based on similar technology.

Paper Details

Date Published: 15 February 1994
PDF: 11 pages
Proc. SPIE 2091, Microelectronic Processes, Sensors, and Controls, (15 February 1994); doi: 10.1117/12.167347
Show Author Affiliations
Calvin Gabriel, VLSI Technology, Inc. (United States)

Published in SPIE Proceedings Vol. 2091:
Microelectronic Processes, Sensors, and Controls
Kiefer Elliott; James A. Bondur; James A. Bondur; Kiefer Elliott; John R. Hauser; John R. Hauser; Dim-Lee Kwong; Asit K. Ray, Editor(s)

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