
Proceedings Paper
Dry patterning of resistive masks and topological structuresFormat | Member Price | Non-Member Price |
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Paper Abstract
The development of dry resistive mask patterning process is the most complex point in practical application of vacuum small-operation cluster automated technologies of producing integrated circuits with submicron range size elements. The problem is successfully solved by small-operation laser vacuum projection lithography (LVPL). The equipment cluster for LVPL includes the installation for dry deposition of resist films on the substrate and the installation for its exposition-displaying. Organic materials are used as resists in such process. It was discovered that topological element formation in resist layers takes place mainly because of high speed thermal processes of resist material sublimation exposed by laser radiation surface parts.
Paper Details
Date Published: 15 February 1994
PDF: 11 pages
Proc. SPIE 2091, Microelectronic Processes, Sensors, and Controls, (15 February 1994); doi: 10.1117/12.167331
Published in SPIE Proceedings Vol. 2091:
Microelectronic Processes, Sensors, and Controls
Kiefer Elliott; James A. Bondur; James A. Bondur; Kiefer Elliott; John R. Hauser; John R. Hauser; Dim-Lee Kwong; Asit K. Ray, Editor(s)
PDF: 11 pages
Proc. SPIE 2091, Microelectronic Processes, Sensors, and Controls, (15 February 1994); doi: 10.1117/12.167331
Show Author Affiliations
Victor V. Boksha, Plasmoteg Engineering Ctr. (Belarus)
Anatoly I. Sharendo, Plasmoteg Engineering Ctr. (Belarus)
Vyjacheslav E. Obukhov, Plasmoteg Engineering Ctr. (Belarus)
Anatoly I. Sharendo, Plasmoteg Engineering Ctr. (Belarus)
Vyjacheslav E. Obukhov, Plasmoteg Engineering Ctr. (Belarus)
Eduard I. Tochitsky, Plasmoteg Engineering Ctr. (Belarus)
A. V. Baranov, Plasmoteg Engineering Ctr. (Belarus)
A. V. Baranov, Plasmoteg Engineering Ctr. (Belarus)
Published in SPIE Proceedings Vol. 2091:
Microelectronic Processes, Sensors, and Controls
Kiefer Elliott; James A. Bondur; James A. Bondur; Kiefer Elliott; John R. Hauser; John R. Hauser; Dim-Lee Kwong; Asit K. Ray, Editor(s)
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