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Proceedings Paper

Metrology hardware simulation of mask focus-exposure matrix
Author(s): Mircea V. Dusa; Guoqing Xiao; Erik H. Rauch
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Paper Abstract

Previous studies described the Depth Resonance Function (DRF) capabilities to understand and control defocus effects of a CD metrology system. This paper discusses the important properties of the DRF and how these properties affect the linewidth metrology process for photomasks built for submicron lithography. The DRF is used to investigate how various metrology process parameters change the response of the CD metrology system. The response of the CD metrology system is then presented as `Focus-Illumination' curves. Such CD results are compared to typical Bossung F-E curves to determine to what extent the metrology Focus- Illumination curves can simulate mask aerial image degradation that occurs during normal stepper exposure process.

Paper Details

Date Published: 15 February 1994
PDF: 10 pages
Proc. SPIE 2087, 13th Annual BACUS Symposium on Photomask Technology and Management, (15 February 1994); doi: 10.1117/12.167257
Show Author Affiliations
Mircea V. Dusa, Technical Instrument Co. (United States)
Guoqing Xiao, Technical Instrument Co. (United States)
Erik H. Rauch, Technical Instrument Co. (United States)

Published in SPIE Proceedings Vol. 2087:
13th Annual BACUS Symposium on Photomask Technology and Management
Edward C. Grady; Jack P. Moneta, Editor(s)

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