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Proceedings Paper

Study of reactions in the gaseous phase during SiC-layers deposition by CVD method
Author(s): Czeslawa Paluszkiewicz; S. Jonas; W. S. Ptak; W. Sadowski
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Paper Abstract

The present work contains preliminary results of investigations of the gaseous phase composition in the course of preparation of SiC layers. The layers were deposited by decomposition of CH3SiCl3 diluted in the Ar stream during CVD process. FTIR spectra of the gaseous phase were recorded using a special reaction cell, at short time intervals and at various temperatures ranging from 300 K to 1200 K. Transition products of the reaction in the gas phase (SiCl4 and CH4 molecules) were observed at higher temperatures. The final product of the reaction, in the gaseous phase, i.e., HCl, was also detected.

Paper Details

Date Published: 31 January 1994
PDF: 2 pages
Proc. SPIE 2089, 9th International Conference on Fourier Transform Spectroscopy, (31 January 1994); doi: 10.1117/12.166723
Show Author Affiliations
Czeslawa Paluszkiewicz, Jagiellonian Univ. (Poland)
S. Jonas, School of Mining and Metallurgy (Poland)
W. S. Ptak, School of Mining and Metallurgy (Poland)
W. Sadowski, School of Mining and Metallurgy (Poland)


Published in SPIE Proceedings Vol. 2089:
9th International Conference on Fourier Transform Spectroscopy
John E. Bertie; Hal Wieser, Editor(s)

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