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Proceedings Paper

Application of so-called negative beam Fourier transform spectroscopy to the investigation of semiconductors
Author(s): Alexander I. Belogorokhov; Lubov I. Belogorokhova
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Paper Abstract

Negative-beam (NB) FTIR measurements are made with no radiation source but with the sample and detector at different temperatures. They are a powerful tool in the study of thermo- stimulated effects in semiconductors without light excitation. They can be used to separate the influence of either photo-generated carriers or possible metastable transformations of impurities, lattice defects, etc. from thermo-induced processes in semiconductors. Moreover observations of stimulated emission from a semiconductor in the far-infrared (FIR) spectral range have only been reported so far at energies well above the multi-phonon energies. This is because the probability of FIR emission is strongly reduced due to non-radiative recombination channels like Auger processes which are strongly enhanced with decreasing band gap energy. Below the energy of the longitudinal optic (LO) phonons,optical emission becomes probable again since LO-phonon assisted scattering processes are energy forbidden.

Paper Details

Date Published: 31 January 1994
PDF: 2 pages
Proc. SPIE 2089, 9th International Conference on Fourier Transform Spectroscopy, (31 January 1994); doi: 10.1117/12.166576
Show Author Affiliations
Alexander I. Belogorokhov, Institute of Rare Metals (Russia)
Lubov I. Belogorokhova, Moscow State Univ. (Russia)

Published in SPIE Proceedings Vol. 2089:
9th International Conference on Fourier Transform Spectroscopy
John E. Bertie; Hal Wieser, Editor(s)

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