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Proceedings Paper

Surface-doped sillenite crystals for integrated optics
Author(s): Valeri A. Voznesensky; George S. Svechnikov
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Paper Abstract

A diffusion technique for the fabrication of waveguide structures in Bi12GeO20,Bi12SiO20 crystals is described. The infrared reflection spectroscopy for the different waveguides thickness has been used to clarify the diffusion mechanism. Reflection spectra of the crystals with different thicknesses of doped layer shows that doping ions formed a chemical bond with oxygen in the tetrahedral environment. In this case doping ions replace Ge, Bi, an Si ions in the crystals unit. Integrated optic waveguides with losses no higher than 1.5 - 2.0 dB/cm for near IR wavelength operation have been successfully formed.

Paper Details

Date Published: 10 December 1993
PDF: 6 pages
Proc. SPIE 2108, International Conference on Holography, Correlation Optics, and Recording Materials, (10 December 1993); doi: 10.1117/12.165423
Show Author Affiliations
Valeri A. Voznesensky, Institute of Telecommunication (Ukraine)
George S. Svechnikov, Institute of Nuclear Research (Ukraine)

Published in SPIE Proceedings Vol. 2108:
International Conference on Holography, Correlation Optics, and Recording Materials
Oleg V. Angelsky, Editor(s)

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