The investigation of relaxation kinetics and thermodynamics of properties of the relaxation of the amorphous state of semiconductor thin films under local effect of laser radiation are reported. The process simulation is carried out on a personal computer. A technique of the determination method of phenomenological characteristics which define the relaxation kinetics and thermodynamics at temperatures close to phase-transition temperatures is developed. Experimentally and theoretically the changes of the behavior of process kinetics from quantities relation of heat liberation and heat removal velocities are investigated. The region of this relationship in which the process has a fluctuation behavior is shown.

Date Published: 10 December 1993
PDF: 5 pages
Proc. SPIE 2108, International Conference on Holography, Correlation Optics, and Recording Materials, (10 December 1993); doi: 10.1117/12.165377

Published in SPIE Proceedings Vol. 2108:
International Conference on Holography, Correlation Optics, and Recording Materials
Oleg V. Angelsky, Editor(s)