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Proceedings Paper

MBE-codeposited iridium silicide films on Si(100) and Si(111)
Author(s): Davis Alan Lange; Gary A. Gibson; Charles M. Falco
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Paper Abstract

We used molecular beam epitaxy to codeposit IrSi3 films on p-type Si(111) and Si(100) substrates at elevated temperatures. Seemann-Bohlin x-ray diffraction reveals the formation of IrSi3 at temperatures as low as 450 degree(s)C. We find that the growth of 100 angstroms IrSi3 films on Si(111) and Si(100) substrates is similar to that of 450 angstroms IrSi3 samples. Using low-energy electron diffraction, Bragg-Brentano x-ray, and transmission electron microscope (TEM) diffraction we identify a previously unreported c-axis oriented growth mode for IrSi3 films deposited around 700 degree(s)C on Si(111) substrates. Indexing of TEM diffraction patterns suggests that the lattice constants for IrSi3 in these thin films are the same as values derived for bulk IrSi3 by other researchers. Atomic force microscopy and TEM images show the formation of continuous 100 angstroms IrSi3 films at temperatures as high as 630 degree(s)C on Si(100) substrates and the formation of epitaxial IrSi3 islands for temperatures above 670 degree(s)C on Si(111).

Paper Details

Date Published: 7 December 1993
PDF: 12 pages
Proc. SPIE 2021, Growth and Characterization of Materials for Infrared Detectors, (7 December 1993); doi: 10.1117/12.164951
Show Author Affiliations
Davis Alan Lange, Univ. of Arizona (United States)
Gary A. Gibson, Univ. of Arizona (United States)
Charles M. Falco, Univ. of Arizona (United States)

Published in SPIE Proceedings Vol. 2021:
Growth and Characterization of Materials for Infrared Detectors
Randolph E. Longshore; Jan W. Baars, Editor(s)

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