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Proceedings Paper

Advanced infrared photonic devices based on HgMnTe
Author(s): Piotr Becla
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Paper Abstract

This review is oriented toward practical technological aspects of growth and applications of narrow bandgap semimagnetic semiconducting HgMnTe alloys. It summarizes recent achievements in crystal growth, device fabrication, and device characterization. Current work is focused on analyses of the growth process, approaches for the achievement of improved composition uniformity, the relationship between material properties and device performance, a comparison of performance of HgMnTe and HgCdTe devices, and new magnetic exchanged- based IR devices.

Paper Details

Date Published: 7 December 1993
PDF: 13 pages
Proc. SPIE 2021, Growth and Characterization of Materials for Infrared Detectors, (7 December 1993); doi: 10.1117/12.164946
Show Author Affiliations
Piotr Becla, Massachusetts Institute of Technology (United States)

Published in SPIE Proceedings Vol. 2021:
Growth and Characterization of Materials for Infrared Detectors
Randolph E. Longshore; Jan W. Baars, Editor(s)

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