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Proceedings Paper

Lifetime of excitons in GaAs quantum wells
Author(s): Bernard Sermage; Benoit Deveaud; Martin Berz; F. Clerot; S. Long; D. Scott Katzer; Francis Mollot
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Paper Abstract

Time resolved luminescence measurements under resonant excitation were performed at 10 K on the free exciton in very high quality GaAs-AlAs quantum wells. At resonance, the luminescence intensity is increased by two orders of magnitude, and the decay is short. The radiative lifetime of the excitons in the radiant states is about 18 ps in agreement with the theory of Hanamura and Andreani. The lifetime of the thermalized excitons is about 80 ps at low excitation and it increases with the excitation density.

Paper Details

Date Published: 19 November 1993
PDF: 8 pages
Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162797
Show Author Affiliations
Bernard Sermage, France Telecom (France)
Benoit Deveaud, France Telecom (France)
Martin Berz, France Telecom (France)
F. Clerot, France Telecom (France)
S. Long, France Telecom (France)
D. Scott Katzer, Naval Research Lab. (United States)
Francis Mollot, CNRS (France)

Published in SPIE Proceedings Vol. 1985:
Physical Concepts and Materials for Novel Optoelectronic Device Applications II
Fabio Beltram; Erich Gornik, Editor(s)

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