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Proceedings Paper

Temperature and light-induced degradation effect on a-Si:H photovoltaic PIN device properties
Author(s): Manuela Vieira; Elvira Fortunato; Carlos N. Carvalho; Guilherme Lavareda; Fernando Soares; Rodrigo Martins
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Paper Abstract

The purpose of this work is to understand how the recombination of carriers generated by light (at several temperatures) can influence the a-Si:H devices quality. Here we report a comparative analysis between the photovoltaic performances of the PIN diodes and the transport properties of their active i-layers under the same degradation conditions.

Paper Details

Date Published: 19 November 1993
PDF: 12 pages
Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162792
Show Author Affiliations
Manuela Vieira, Univ. Nova de Lisboa (Portugal)
Elvira Fortunato, Univ. Nova de Lisboa (Portugal)
Carlos N. Carvalho, Univ. Nova de Lisboa (Portugal)
Guilherme Lavareda, Univ. Nova de Lisboa (Portugal)
Fernando Soares, Univ. Nova de Lisboa (Portugal)
Rodrigo Martins, Univ. Nova de Lisboa (Portugal)

Published in SPIE Proceedings Vol. 1985:
Physical Concepts and Materials for Novel Optoelectronic Device Applications II
Fabio Beltram; Erich Gornik, Editor(s)

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