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Proceedings Paper

Nonlinear optical interband transitions between electronic states in semiconductors in crossed-electric and magnetic fields
Author(s): Edmondo De Salvo; Raffaello Girlanda
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Paper Abstract

Since within the effective mass approximation the Hamiltonian describing the electronic states of a semiconductor in the presence of crossed electric and magnetic fields contains non local potentials, then the interaction Hamiltonian between matter and radiation field has to be generalized in order to preserve the gauge independence of physical quantities. The two photon interband transition rate between two particular levels is evaluated in both length and velocity gauges demonstrating the correctness of our approach, moreover, the difference with the traditional approach is discussed.

Paper Details

Date Published: 19 November 1993
PDF: 8 pages
Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162775
Show Author Affiliations
Edmondo De Salvo, Digital Equipment SpA (Italy)
Raffaello Girlanda, Univ. di Messina (Italy)

Published in SPIE Proceedings Vol. 1985:
Physical Concepts and Materials for Novel Optoelectronic Device Applications II
Fabio Beltram; Erich Gornik, Editor(s)

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