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Proceedings Paper

Time-resolved fluorescence investigation of SiC epitaxy layer
Author(s): Harald Bergner; Ralf Goerlich; A. Krause
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Paper Abstract

We report time-resolved fluorescence measurements in 6H-SiC samples in a subnanosecond time range with a high spatial resolution. The fluorescence kinetics of the 6H-SiC substrate grown by the Lely-method is characterized by a mono-exponential decay with a time constant of about 50 ns. The epilayer of 5 micrometers thickness grown by liquid phase epitaxy shows a significant faster decay in the subnanosecond range which can be explained by a distinguished higher defect concentration in comparison to the substrate. The spatially resolved detection demonstrates that the lifetime change within 100 micrometers . The red wavelength range shows a slower fluorescence lifetime than the blue one.

Paper Details

Date Published: 19 November 1993
PDF: 6 pages
Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162745
Show Author Affiliations
Harald Bergner, Friedrich-Schiller-Univ. Jena (Germany)
Ralf Goerlich, Friedrich-Schiller-Univ. Jena (Germany)
A. Krause, Friedrich-Schiller-Univ. Jena (Germany)

Published in SPIE Proceedings Vol. 1985:
Physical Concepts and Materials for Novel Optoelectronic Device Applications II
Fabio Beltram; Erich Gornik, Editor(s)

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